MOCVD PRECURSORS
MOCVD 前驅物
III/V – COMPOUNDS
TBAS
TBAs
Tertiarybutylarsine
TMAS
TMAs
Trimethylarsine
DETBAS
DETBAs
Diethyltertiarybutylarsine
TBP
TBP
Tertiarybutylphosphine
DETBUP
DETBUP
Diethyltertiarybutylphosphine
TBHY
TBHy
Tertiarybutylhydrazine
UDMHY
UDMHy
Dimethylhydrazine
TMSB
TMSb
Trimethylantimony
TESB
TESb
Triethylantimony
TMBI
TMBi
Trimethylbismuth
TEB
TEB
Triethylboron
TTBB
TTBB
Tritertiarybutylboron
TMAL
TMAl
Trimethylaluminum
TTBAL
TTBAl
Tris(tertiarybutyl)aluminium
TMGA
TMGa
Trimethylgallium
TEGA
TEGa
Triethylgallium
TTBGA
TTBGa
Tritertiarybutylgallium
TMIN
TMIn
Trimethylindium
DADI
DADI
Dimethylaminopropyl-dimethyl-indium
II/VI – COMPOUNDS
DTBS
DTBS
Ditertiarybutylsulphide
DIPSE
DiPSe
Diisopropylselenide
DMCD
DMCd
Dimethylcadmium
DOPANTS
CTBR
CTBr
Carbontetrabromide
CCL3BR
CCl3Br
Carbontribromidechloride
DTBSI
DTBSi
Ditertiarybutylsilane
CP2FE
CP2Fe
Ferrocene
DMZN
DMZn
Dimethylzinc
DEZN
DEZn
Diethylzinc
DETE
DETe
Diethyltellurium
ETCHING MATERIALS
TBCL
TBCl
Tertiarybutylchloride